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Characteristics of our macro inspection and the technology used for it

◆Characteristics of our macro inspection
*The tendency of the entire work is visible at first sight. -> Clarifying the areas in which micro inspection needs to be performed.
*The time required for inspection/measurement is very short. -> Enabling 100% inspection rather than sampling inspection  
*The types of work which can be inspected are varied. -> Everything that can reflect light can be inspected.
◆Technology
*The core technology (OAS Technology) employs the original optical system that uses scattered light and that is dedicated to macro inspection.
*The characteristics of the OAS optical system are as follows:
- Uses edge reflection light (light directly reflected by patterns)
- Uses Mie scattering (directional light reflected by semitransparent bodies) 
- Optimizes inspection light source wavelengths (optimizes wavelengths required for inspections, depending on the characteristics of the work)
◆What our macro inspection can do
*Macro inspection that is highly correlated with CD (critical dimensions) can be carried out.
*Changes in sizes that are as small as 3 nm can be identified from a macro perspective.
*The unevenness of wafers with a mirror plane can be visualized.
*Flaws or scratches on uneven metal surfaces can be inspected.

Actual examples of macro images

By utilizing the OAS Technology, we evaluate various samples. We would like to introduce a few examples which show what macro inspection can achieve. 
-Visualizing nano-level unevenness by using our macro technology
With a pixel size of 20 μm, bumps that are as small as 10 nm can be identified. Our macro technology can visualize crystal defects, which could hardly be identified by macro technologies in the past, in units of nano. Our macro technology has actually been introduced to mass-production processes. In addition, when the optical system and the visualization filter uniquely developed by us are used to inspect a wafer surface which, when visually checked, is a perfect mirror plane, unevenness on the wafer (PW) surface can be visualized in units of nano.  
-Line width and high correlation
Instead of using an SEM (scanning electron microscope) to measure 400 points of 1 chip for two hours, you can manage the line width of all wafer chips by using the macro technology and simply scanning them for 20 seconds. In February 2006, when we announced data at SPIE (an international not-for-profit professional society for optics and photonics technology), the data demonstrated a high correlation between CD (critical dimensions) and image luminance. 
-Optimum for managing NIL (nanoimprint lithography) processes
In nanoimprint mass-production processes, templates and copied work must be managed. The OAS1 macro technology enables simple selection of the optimum conditions for observing unevenness that should be managed and clarified. The conditions of templates and copied work will be very obvious.

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Kanto Head Office, SMRJ