Latest update： 30/11/2016 17:15:47
NITRIDE SEMICONDUCTORS Co., Ltd.
Providing energy saving UV LEDs for use in a wide variety of fields
We have obtained many patents relating to UV LED structure and production methods and, through technical collaboration with an overseas LED manufacturer, have succeeded in delivering advanced technologies at low cost. We have a large market share in the UV light sources used for currency note identification in ATMs. We also supply optimal light sources for application in areas such as the curing of photo-resins and semiconductors, air purification, medical/biotech, high color rendering white LEDs and the like.
[Product description] Ultraviolet Light Emitting Diodes (UV LEDs) are created through epitaxial growth of LED crystals on sapphire substrates, using the Metal Organic Chemical Vapor Deposition (MOCVD) method. The light emitting efficiency of LEDs degrades rapidly at wavelengths less than 380nm, due to impact on transition density resulting from non-uniformity in the InGaN layer, as well as light re-absorption in the GaN layer at wavelengths of 370nm or lower. In order to improve this efficiency, increasing the uniformity of the active layer is required, as well as reducing both the dislocation density and the rate of GaN absorption. [Intellectual property] We have applied for and obtained numerous patents relating primarily to the structure and manufacturing methods of UV LEDs ? a field in which the company has led its competitors ? and those relating to technologies that enhance LED efficiency and to applications that integrate UV LEDs. Domestic patents: 24. Overseas patents: 29.